➀ China Mobile and ZTE visited Jiangbolong's storage industrial park for research and discussions on storage technology innovation and industrial collaboration.

➁ The visit included an in-depth look at the history of storage technology and a tour of the storage production line.

➂ Jiangbolong showcased its full-stack capabilities in storage, including in-house research and development in IP, main control chips, hardware design, firmware programs, industrial design, testing tools, production machines, and digital systems.

➀ Samsung Electronics is releasing a 1Tbit 3D NAND flash memory with storage cell layers up to 400+ layers, achieving a memory density of 28.2Gbit/mm2 using TLC method.

➁ Kioxia and Western Digital's joint development team is reporting a 1Tbit 3D NAND flash memory with 332 layers, with a memory density of up to 29Gbit/mm2.

➂ SK Hynix has developed a 2Tbit 3D NAND flash memory with 321 layers, using QLC method multi-value storage.

➃ Samsung is currently developing the 9th generation 3D NAND with 286 layers and is working on 400-layer technology.

➅ Kioxia plans to mass-produce 3D NAND storage devices with over 1,000 layers by 2031.

➆ The journey towards 1,000-layer 3D NAND involves multiple improvements in manufacturing processes, including vertical, horizontal, and logical aspects.